Mock, M. S. Analysis of a discretization algorithm for stationary continuity equations in semiconductor device models. (English) Zbl 0619.65116 COMPEL 2, 117-139 (1983). An explanation is given for the apparent accuracy of the most commonly used method for discretization of the stationary continuity equations in semiconductor device models. The accuracy of this method does not depend on relatively small changes in the electrostatic potential or the quasi- Fermi potentials between neighboring mesh points, or on the flow of current essentially along the mesh lines as has been previously suggested. It is obtained because implicit in this procedure is a consistent, and fairly accurate, discretization of the associated systems for the stream functions and recombination potential. Our analysis indicates suitable choices for various parameters appearing in the discrete system, and conditions on the construction and refinement of a mesh so as to obtain reasonable or optimal accuracy. In addition, it is determined that given the electrostatic potential distribution, the values of the device terminal currents (but not the point values of the carrier densities or the local current densities) can be computed with an accuracy independent of some of the bias voltages by this procedure. Cited in 1 ReviewCited in 9 Documents MSC: 65Z05 Applications to the sciences 65N12 Stability and convergence of numerical methods for boundary value problems involving PDEs 78A35 Motion of charged particles 35J65 Nonlinear boundary value problems for linear elliptic equations Keywords:mesh refinement; mesh generation; stationary continuity equations; semiconductor device models; electrostatic potential; quasi-Fermi potentials PDFBibTeX XMLCite \textit{M. S. Mock}, COMPEL 2, 117--139 (1983; Zbl 0619.65116) Full Text: DOI References: [1] DOI: 10.1049/el:19740270 · doi:10.1049/el:19740270 [2] Buturla E.M., Proc. Int. Conf. Computer Methods in Nonlinear Mechanics pp 512– (1974) [3] Kani K., Proc. Nasecdoe 1 Conf., Dublin, Ireland (1979) pp 104– [4] DOI: 10.1016/0038-1101(73)90159-7 · doi:10.1016/0038-1101(73)90159-7 [5] Mock M.S., Analysis of Mathematical Models of Semiconductor Devices (1983) · Zbl 0532.65081 [6] Raviart P.A., Lecture Notes in Mathematics 606, in: Mathematical Aspects of Finite Element Methods pp 292– [7] Raviart P.A., Math. Comp. 31 pp 391– (1977) [8] DOI: 10.1109/T-ED.1969.16566 · doi:10.1109/T-ED.1969.16566 [9] Selberherr S., Proc. Nasecode I Conf., Dublin, Ireland (1979) pp 275– [10] DOI: 10.1049/el:19690510 · doi:10.1049/el:19690510 [11] Thomas J.M., RAIRO Serie Analyse Numerique 10 pp 51– (1976) [12] DOI: 10.1002/j.1538-7305.1950.tb03653.x · Zbl 1372.35295 · doi:10.1002/j.1538-7305.1950.tb03653.x [13] Absi E., Methods de Calcul Numerique en Elasticite (Editions Eyrolles (1978) This reference list is based on information provided by the publisher or from digital mathematics libraries. Its items are heuristically matched to zbMATH identifiers and may contain data conversion errors. In some cases that data have been complemented/enhanced by data from zbMATH Open. This attempts to reflect the references listed in the original paper as accurately as possible without claiming completeness or a perfect matching.