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Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides (English)
Microelectronics Reliability 45, No. 5-6, 883-886 (2005).
WorldCat.org
1
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies (English)
Microelectronics Reliability 43, No. 8, 1241-1246 (2003).
WorldCat.org
2
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