3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET (English)
Microelectronics Reliability 48, No. 8-9, 1464-1467 (2008).
1
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications (English)
Microelectronics Reliability 48, No. 8-9, 1453-1458 (2008).
2
Characterization and modelling of ageing failures on power MOSFET devices (English)
Microelectronics Reliability 47, No. 9-11, 1735-1740 (2007).
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io-port 50233822 Khong, B.;
Tounsi, P.;
Dupuy, Ph.;
Chauffleur, X.;
Legros, M.;
Deram, A.;
Levade, C.;
Vanderschaeve, G.;
Dorkel, J. M.;
Fradin, J. P.
Innovative methodology for predictive reliability of intelligent power devices using extreme electro-thermal fatigue (English)
Microelectronics Reliability 45, No. 9-11, 1717-1722 (2005).
4
Characterization method of thermomechanical parameters for microelectronic materials (English)
Microelectronics Reliability 42, No. 7, 1053-1058 (2002).
5