Result 1 to 10 of 10 total
io-port 50232353 Arinero, R.;
Zhang, En-Xia;
Rezzak, Nadia;
Schrimpf, Ronald D.;
Fleetwood, Daniel M.;
Choï, B. K.;
Hmelo, A. B.;
Mekki, J.;
Touboul, A. D.;
Saigné, F.
High fluence 1.8 mev proton irradiation effects on n-type MOS capacitors (English)
Microelectronics Reliability 51, No. 12, 2093-2096 (2011).
1
The sensitivity of radiation-induced leakage to STI topology and sidewall doping (English)
Microelectronics Reliability 51, No. 5, 889-894 (2011).
2
io-port 50233498 Roy, Tania;
Puzyrev, Yevgeniy S.;
Zhang, En-Xia;
Dasgupta, Sandeepan;
Francis, Sarah A.;
Fleetwood, Daniel M.;
Schrimpf, Ronald D.;
Mishra, Umesh K.;
Speck, Jim S.;
Pantelides, Sokrates T.
1/f noise in gan hemts grown under ga-rich, N-rich, and $NH_{3}$-rich conditions (English)
Microelectronics Reliability 51, No. 2, 212-216 (2011).
3
Total ionizing dose effects in shallow trench isolation oxides (English)
Microelectronics Reliability 48, No. 7, 1000-1007 (2008).
4
Hydrogen in mosfets - A primary agent of reliability issues (English)
Microelectronics Reliability 47, No. 6, 903-911 (2007).
5
Effects of device aging on microelectronics radiation response and reliability (English)
Microelectronics Reliability 47, No. 7, 1075-1085 (2007).
6
Single event burnout in power diodes: mechanisms and models (English)
Microelectronics Reliability 46, No. 2-4, 317-325 (2006).
7
Single event transient effects in a voltage reference (English)
Microelectronics Reliability 45, No. 2, 355-359 (2005).
8
A generalized model for the lifetime of microelectronic components, applied to storage conditions (English)
Microelectronics Reliability 41, No. 2, 317-322 (2001).
9
Thermal modeling of single event burnout failure in semiconductor power devices (English)
Microelectronics Reliability 41, No. 4, 571-578 (2001).
10
Result 1 to 10 of 10 total
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