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io-port 50232991 Lachéze, L.; Latry, O.; Dherbécourt, P.; Mourgues, K.; Purohit, V.; Maanane, H.; Sipma, J. P.; Cornu, F.; Eudeline, Ph.

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application (English)

Microelectronics Reliability 51, No. 8, 1289-1294 (2011).

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io-port 50233908 Latry, O.; Dherbécourt, P.; Mourgues, K.; Maanane, H.; Sipma, J. P.; Cornu, F.; Eudeline, Ph.; Masmoudi, M.

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications (English)

Microelectronics Reliability 50, No. 9-11, 1574-1576 (2010).

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io-port 50131454 Belaïd, M. A.; Ketata, K.; Mourgues, K.; Gares, M.; Masmoudi, M.; Marcon, J.

Reliability study of power RF LDMOS device under thermal stress (English)

Microelectronics Journal 38, No. 2, 164-170 (2007).

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io-port 50233119 Gares, M.; Belaïd, M. A.; Maanane, H.; Masmoudi, M.; Marcon, J.; Mourgues, K.; Eudeline, Ph.

Study of hot-carrier effects on power RF LDMOS device reliability (English)

Microelectronics Reliability 47, No. 9-11, 1394-1399 (2007).

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io-port 50233438 Belaïd, M. A.; Ketata, K.; Gares, M.; Mourgues, K.; Masmoudi, M.; Marcon, J.

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests (English)

Microelectronics Reliability 47, No. 1, 59-64 (2007).

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io-port 50234265 Maanane, H.; Masmoudi, M.; Marcon, J.; Belaïd, M. A.; Mourgues, K.; Tolant, C.; Ketata, K.; Eudeline, Ph.

Study of RF $N^{-}$ LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF (English)

Microelectronics Reliability 46, No. 5-6, 994-1000 (2006).

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io-port 50234777 Gares, M.; Maanane, H.; Masmoudi, M.; Bertram, P.; Marcon, J.; Belaïd, M. A.; Mourgues, K.; Tolant, C.; Eudeline, Ph.

Hot carrier reliability of RF N- LDMOS for S band radar application (English)

Microelectronics Reliability 46, No. 9-11, 1806-1811 (2006).

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io-port 70624461 Gares, M.; Maanane, H.; Belaïd, M. A.; Masmoudi, M.; Marcon, J.; Mourgues, K.; Bertram, P.; Eudeline, Ph.

Impact de la temperature sur la fiabilite des composants rf ldmos de puissance (English)

CCECE, 382-385 (2006).

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io-port 50234111 Belaïd, M. A.; Ketata, K.; Mourgues, K.; Maanane, H.; Masmoudi, M.; Marcon, J.

Comparative analysis of accelerated ageing effects on power RF LDMOS reliability (English)

Microelectronics Reliability 45, No. 9-11, 1732-1737 (2005).

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io-port 70032244 Guillet, D.; Mourgues, K.; Rogel, R.; Lhermite, H.; Bonnaud, Olivier

Student realization in cleanroom of silicon-germanium thin film transistors (English)

MSE, 69-70 (1999).

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