Result 1 to 20 of 21 total
Experimental power cycling on insulated TRIAC package: reliability interpretation thanks to an innovative failure analysis flow (English)
Microelectronics Reliability 51, No. 9-11, 1845-1849 (2011).
1
io-port 50234672 Koné, G. A.;
Grandchamp, B.;
Hainaut, C.;
Marc, F.;
Maneux, C.;
Labat, Nathalie;
Zimmer, Thomas;
Nodjiadjim, Virginie;
Riet, Muriel;
Godin, Jean
Reliability of submicron ingaas/inp DHBT under thermal and electrical stresses (English)
Microelectronics Reliability 51, No. 9-11, 1730-1735 (2011).
2
Editorial (English)
Microelectronics Reliability 51, No. 9-11, 1423-1424 (2011).
3
Analysis of current collapse effect in algan/gan HEMT: experiments and numerical simulations (English)
Microelectronics Reliability 50, No. 9-11, 1520-1522 (2010).
4
Failure analysis case study on a cu/low-k technology in package: new front-side approach using laser and plasma de-processing (English)
Microelectronics Reliability 50, No. 9-11, 1688-1691 (2010).
5
Preliminary results of storage accelerated aging test on inp/ingaas DHBT (English)
Microelectronics Reliability 50, No. 9-11, 1548-1553 (2010).
6
Editorial (English)
Microelectronics Reliability 49, No. 9-11, 935-936 (2009).
7
io-port 50233788 Malbert, N.;
Labat, Nathalie;
Curutchet, A.;
Sury, C.;
Hoel, V.;
De Jaeger, J. -C.;
Defrance, N.;
Douvry, Y.;
Dua, Christian;
Oualli, Mourad;
Bru-Chevallier, C.;
Bluet, J. -M.;
Chikhaoui, W.
Characterisation and modelling of parasitic effects and failure mechanisms in algan/gan hemts (English)
Microelectronics Reliability 49, No. 9-11, 1216-1221 (2009).
8
Analysis of traps effect on algan/gan HEMT by luminescence techniques (English)
Microelectronics Reliability 48, No. 8-9, 1366-1369 (2008).
9
Study of passivation defects by electroluminescence in algan/gan HEMTS on sic (English)
Microelectronics Reliability 47, No. 9-11, 1630-1633 (2007).
10
io-port 50233924 Faqir, M.;
Verzellesi, G.;
Fantini, Fausto;
Danesin, Francesca;
Rampazzo, F.;
Meneghesso, Gaudenzio;
Zanoni, Enrico;
Cavallini, Anna;
Castaldini, Antonio;
Labat, Nathalie;
Touboul, A.;
Dua, Christian
Characterization and analysis of trap-related effects in algan-gan hemts (English)
Microelectronics Reliability 47, No. 9-11, 1639-1642 (2007).
11
Editorial (English)
Microelectronics Reliability 47, No. 9-11, 1311-1312 (2007).
12
Algan/gan HEMT reliability assessment by means of low frequency noise measurements (English)
Microelectronics Reliability 46, No. 9-11, 1725-1730 (2006).
13
Editorial (English)
Microelectronics Reliability 45, No. 9-11, 1275-1276 (2005).
14
Safe operating area of gaas MESFET and PHEMT for amplification in overdrive operating conditions (English)
Microelectronics Reliability 45, No. 9-11, 1611-1616 (2005).
15
Low frequency drain noise comparison of algan/gan hemt’s grown on silicon, sic and sapphire substrates (English)
Microelectronics Reliability 43, No. 9-11, 1713-1718 (2003).
16
1/f noise analysis of inp/ingaas dhbts submitted to bias and thermal stresses (English)
Microelectronics Reliability 43, No. 9-11, 1725-1730 (2003).
17
High current effects in inp/gaassb/inp DHBT: physical mechanisms and parasitic effects (English)
Microelectronics Reliability 43, No. 9-11, 1731-1736 (2003).
18
Editorial (English)
Microelectronics Reliability 43, No. 9-11, 1351-1352 (2003).
19
Degradation mechanisms induced by thermal and bias stresses in inp hemts (English)
Microelectronics Reliability 42, No. 9-11, 1575-1580 (2002).
20
Result 1 to 20 of 21 total
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