Result 1 to 20 of 26 total
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime (English)
Microelectronics Reliability 51, No. 2, 235-239 (2011).
1
Editorial (English)
Microelectronics Reliability 51, No. 2, 187 (2011).
2
A physical large-signal model for gan HEMTS including self-heating and trap-related dispersion (English)
Microelectronics Reliability 51, No. 2, 229-234 (2011).
3
Editorial (English)
Microelectronics Reliability 50, No. 6, 757 (2010).
4
Thermal modeling of planar transformer for switching power converters (English)
Microelectronics Reliability 50, No. 9-11, 1778-1782 (2010).
5
Three-dimensional finite-element thermal simulation of gan-based hemts (English)
Microelectronics Reliability 49, No. 5, 468-473 (2009).
6
Heat management for power converters in sealed enclosures: A numerical study (English)
Microelectronics Reliability 49, No. 9-11, 1293-1298 (2009).
7
Editorial (English)
Microelectronics Reliability 49, No. 5, 467 (2009).
8
Thermal modeling of high frequency DC-DC switching modules: electromagnetic and thermal simulation of magnetic components (English)
Microelectronics Reliability 48, No. 8-9, 1468-1472 (2008).
9
Editorial (English)
Microelectronics Reliability 48, No. 7, 957 (2008).
10
A review of the use of electro-thermal simulations for the analysis of heterostructure fets (English)
Microelectronics Reliability 47, No. 1, 65-73 (2007).
11
Test structures for dielectric spectroscopy of thin films at microwave frequencies (English)
Microelectronics Reliability 47, No. 4-5, 682-685 (2007).
12
Editorial (English)
Microelectronics Reliability 47, No. 8, 1155 (2007).
13
Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design (English)
Microelectronics Journal 37, No. 5, 409-416 (2006).
14
Thermal characterization and modeling of power hybrid converters for distributed power systems (English)
Microelectronics Reliability 46, No. 9-11, 1760-1765 (2006).
15
Editorial (English)
Microelectronics Reliability 46, No. 8, 1217 (2006).
16
Editorial (English)
Microelectronics Reliability 45, No. 12, 1868 (2005).
17
On state breakdown in phemts and its temperature dependence (English)
Microelectronics Reliability 45, No. 9-11, 1605-1610 (2005).
18
Editorial (English)
Microelectronics Reliability 44, No. 7, 1031 (2004).
19
Power p-i-n diodes for snubberless application: $H^{+}$ irradiation for soft and reliable reverse recovery (English)
Microelectronics Reliability 43, No. 1, 81-87 (2003).
20
Result 1 to 20 of 26 total
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