@article {IOPORT.05759728,
    author       = {Sharifi, Mohammad Javad and Bahrepour, Davoud},
    title        = {A new XOR structure based on resonant-tunneling high electron mobility transistor.},
    year         = {2009},
    journal      = {VLSI Design},
    volume       = {2009},
    issn         = {1065-514X},
    pages        = {Article ID 803974, 9 p.},
    publisher    = {Hindawi Publishing Corporation, New York, NY},
    doi          = {10.1155/2009/803974},
    abstract     = {Summary: A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.},
    identifier   = {05759728},
}