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\iteman{io-port 06105175}
\itemau{Kaushik, Naveen; Kaushik, Brajesh Kumar; Kaur, Davinder; Majumder, Manoj Kumar}
\itemti{Independent gate SRAM based on asymmetric gate to source/drain overlap-underlap device FinFET.}
\itemso{Rahaman, Hafizur (ed.) et al., Progress in VLSI design and test. 16th international symposium, VDAT 2012, Shibpur, India, July 1--4, 2012. Proceedings. Berlin: Springer (ISBN 978-3-642-31493-3/pbk). Lecture Notes in Computer Science 7373, 373-374 (2012).}
\itemab
Summary: The read-write ability of SRAM cells is one of the major concern in nanometer regime. This paper analyzes the stability and performance of asymmetric FinFET based different schematic of 6T SRAM cells. The proposed structure exploits asymmetrical behavior of current to improve read-write stability of SRAM. By exploiting the asymmetricity in proposed structure, contradiction between read and write noise margin (RNM and WNM) is relaxed. The overall improvements in static, read and write noise margins for proposed asymmetric FinFET based independent gate SRAM (IGSRAM) are 28\%, 71\%, and 31\% respectively.
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\itemut{FinFET; IGSRAM; SNM; RNM; WNM; leakage current}
\itemli{doi:10.1007/978-3-642-31494-0\_48}
\end