@article {IOPORT.50232821,
    author       = {Hung, H. J. and Kuo, J. B. and Chen, D. and Yeh, C. S.},
    title        = {Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect},
    year         = {2010},
    journal      = {Microelectronics Reliability},
    volume       = {50},
    number       = {5},
    pages        = {607-609},
    doi          = {10.1016/j.microrel.2010.01.015},
    identifier   = {50232821},
}