<?xml version="1.0" encoding="utf-8" standalone="yes"?>
<item>
  <id>05449887</id>
  <dt>j</dt>
  <an>05449887</an>
  <augroup>
    <au>Thurner, Martin</au>
    <au>Lindorfer, Philipp</au>
    <au>Selberherr, Siegfried</au>
  </augroup>
  <ti>Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation.</ti>
  <so>IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 9, No. 11, 1189-1197 (1990).</so>
  <py>1990</py>
  <pu>IEEE, New York, NY</pu>
  <lagroup>
    <la>EN</la>
  </lagroup>
  <ccgroup>
  </ccgroup>
  <utgroup>
  </utgroup>
  <cigroup>
  </cigroup>
  <ligroup>
    <li>doi:10.1109/43.62756</li>
  </ligroup>
</item>