Properties of the steady state distribution of electrons in semiconductors. (English)
Kinet. Relat. Models 4, No. 3, 809-829 (2011).
1
Numerical study of the systematic error in Monte Carlo schemes for semiconductors. (English)
ESAIM, Math. Model. Numer. Anal. 44, No. 5, 1049-1068 (2010).
2
Numeric estimation of the truncation error in direct simulation Monte Carlo for bulk silicon. (English)
Primicerio, Mario (ed.) et al., Applied and industrial mathematics in Italy. Proceedings of the 7th conference, Venice, Italy, September 20‒24, 2004. River Edge, NJ: World Scientific (ISBN 981-256-368-7). Series on Advances in Mathematics for Applied Sciences 69, 393-403 (2005).
3
Sobolev norm and carrier transport in semiconductors. (English)
Ben Abdallah, Naoufel (ed.) et al., Transport in transition regimes. Papers presented at the IMA workshops “Dispersive corrections to transport equations", May 1‒5, 2000, “Simulation of transport in transition regimes", May 22‒26, 2000, and “Multiscale models for surface evolution and reacting flows", June 5‒9, 2000, Minneapolis, MN, USA. New York, NY: Springer (ISBN 0-387-40495-3/hbk). IMA Vol. Math. Appl. 135, 231-239 (2004).
4
Comparison of Monte Carlo and deterministic simulations of a silicon diode. (English)
Ben Abdallah, Naoufel (ed.) et al., Transport in transition regimes. Papers presented at the IMA workshops “Dispersive corrections to transport equations", May 1‒5, 2000, “Simulation of transport in transition regimes", May 22‒26, 2000, and “Multiscale models for surface evolution and reacting flows", June 5‒9, 2000, Minneapolis, MN, USA. New York, NY: Springer (ISBN 0-387-40495-3/hbk). IMA Vol. Math. Appl. 135, 75-84 (2004).
5
Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors. (English)
Contin. Mech. Thermodyn. 8, No.3, 131-142 (1996).
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